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3.2 Gbps, 3.3 V, Low Noise, Transimpedance Amplifier ADN2880
FEATURES
Bandwidth: 2.5 GHz Optical sensitivity: -24.2 dBm 1 Differential transimpedance: 4400 V/A Power dissipation: 70 mW Differential output swing: 260 mV p-p Input overload current: 4.3 mA p-p On-chip RSSI function Low frequency cutoff: 20 kHz On-chip PD filter: RF = 200 , CF = 20 pF Die size: 0.7 mm x 1.2 mm
GENERAL DESCRIPTION
The ADN2880 is a 3.3 V, high gain SiGe transimpedance amplifier (TIA). The TIA converts the small signal current of a photo detector into differential voltage output. The ADN2880 features a 315 nA typical input-referred noise, enabling an optical sensitivity of -24.2 dBm (0.85 A/W PIN). With a bandwidth of 2.5 GHz, the ADN2880 allows a data rate operation up to 3.2 Gbps. Typical power dissipation is approximately 70 mW. To facilitate the assembly in small form factor packages, such as TO-46 headers, the ADN2880 provides an on-chip RC filter (200 , 20 pF) and features a 20 kHz low frequency cutoff without using an external capacitor. An on-chip RSSI circuit, which generates a voltage proportional to the average photodiode current, is also available for power monitoring and assembly alignment. The ADN2880 is available in die form. With a chip area of 1.2 mm x 0.7 mm, the TIA layout is specifically optimized for TO-Can-based packages.
1
APPLICATIONS
3.2 Gbps or below optical receivers SONET/GbE/FC optical receivers SFF-8472-compliant receivers PIN/APD-TIA receive optical subassemblies (ROSA)
Based on 1550 nm PIN, responsivity = 0.85 A/W, ER = 9 dB, BER < 10-10.
FUNCTIONAL BLOCK DIAGRAM
3.3V VCCFILTER VCC
200 FILTER
50 1400
50 OUT OUTB
IN
20pF
0.85V
5mA RSSI
Figure 1.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 (c) 2005 Analog Devices, Inc. All rights reserved.
04945-001
GND
GND
CAP
ADN2880 TABLE OF CONTENTS
Features .............................................................................................. 1 Applications....................................................................................... 1 General Description ......................................................................... 1 Functional Block Diagram .............................................................. 1 Revision History ............................................................................... 2 Electrical Specifications ................................................................... 3 Absolute Maximum Ratings............................................................ 4 ESD Caution.................................................................................. 4 Pad Layout and Function Descriptions ..........................................5 Typical Performance Characteristics ..............................................6 Assembly Recommendations...........................................................9 Outline Dimensions ....................................................................... 12 Die Information.......................................................................... 12 Ordering Guide .......................................................................... 12
REVISION HISTORY
7/05--Revision 0: Initial Version
Rev. 0 | Page 2 of 12
ADN2880 ELECTRICAL SPECIFICATIONS
Minimum/maximum VCC = 3.3 V 0.3 V, TAMBIENT = -40C to +95C; typical VCC = 3.3 V, TAMBIENT = 25C, unless otherwise noted. Table 1.
Parameter DYNAMIC PERFORMANCE Bandwidth (BW) 1 Total Input Referred RMS Noise (IRMS) Total Input Referred RMS Noise (IRMS) Small Signal Transimpedance (ZT)1 Low Frequency Cutoff Output Return Loss Input Overload Current Maximum Differential Output Swing Output Data Transition Time PSRR Group Delay Variation Transimpedance Ripple Deterministic Jitter Conditions -3 dB CD = 0.8 pF, dc to 2.1 GHz CD = 0.6 pF, dc to 2.1 GHz 100 MHz, differential 100 MHz, single-ended CAP = open, IIN = 20 A CAP = 1 nF, IIN = 20 A DC to 3.5 GHz, differential ER = 10 dB, at 95C1 IIN, P- P = 2.0 mA IIN, P-P = 1.0 mA; 20% to 80% rise/fall time IIN = 0 mA, <10 MHz 1.0 GHz to 3.0 GHz 50 MHz to 1.0 GHz, single-ended 10 A < IIN, P- P 100 A, K28.5 @ 3.2 Gbps 100 A < IIN, P- P 2.0 mA, K28.5 @ 3.2 Gbps 10 A < IIN, P- P 2.0 mA, PRBS 231 - 1 at OC48 (FEC) Differential, <1 dB compression Single-ended, <1 dB compression IIN, AVE = 0 mA Compliance voltage DC (50 ) terminated to VCC Single-ended RF CF IIN, AVE = 5 A to 1 mA IIN, AVE = 10 A 5 A < IIN, P- P 20 A 20 A < IIN, P- P 1 mA Min 1.9 Typ 2.5 315 300 4400 2200 20 1.0 -26 4.3 260 60 39 50 0.93 16 25 38 210 53 70 0.85 VCC - 0.12 50 200 20 0.85 8.0 7 3 Max Unit GHz nA nA V/A V/A kHz kHz dB mA p-p mV p-p ps dB ps dB ps p-p ps p-p ps p-p mV p-p A p-p mW V V pF V/mA mV % %
485 6200 3100
2700 1350
-20 375
2.11 170
Linear Output Range Linear Input Current Range DC PERFORMANCE Power Dissipation Input Voltage Output Common-Mode Voltage Output Impedance PD FILTER Resistance PD FILTER Capacitance RSSI Gain RSSI Offset RSSI Accuracy
110
1
An equivalent IIN, P-P = 13 A current signal is applied to the TIA input. No input capacitor is applied.
Rev. 0 | Page 3 of 12
ADN2880 ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Supply Voltage (VCC to GND) Maximum Voltage to All Input and Output Signal Pins Minimum Voltage to All Input and Output Signal Pins Maximum Input Current Storage Temperature Range Operating Ambient Temperature Range Maximum Junction Temperature Die Attach Temperature (<30 sec) Rating 5V VCC + 0.4 V GND - 0.4 V 10 mA -65C to +125C -40C to +95C 125C 410C
Stresses above those listed under Absolute Maximum Rating may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. 0 | Page 4 of 12
ADN2880 PAD LAYOUT AND FUNCTION DESCRIPTIONS
VCC VCC VCCFILTER GND
GND
1
17
16
15
14
13
GND
IN
2 12 OUT
TEST
3 11 OUTB
FILTER
4
FILTER
5
6
7
8
9
10
GND
GND
RSSI
CAP
GND
Figure 2. Pad Layout
Table 3. Pad Function Descriptions
Pad No. 1 2 3 4, 5 6 7 8 9, 10, 13, 14 11 12 15 16, 17
1
Mnemonic GND IN TEST FILTER GND RSSI CAP GND OUTB OUT VCCFILTER VCC
Pin Type 1 P AI AI AO P AO AI P AO AO P P
Description Ground. (Input return.) Current Input. Bond directly to a photodiode (PD) anode. Test Probe Pad. Do not connect. Filter Output. Pad 4 and Pad 5 are metal connected. Optional bond to a PD cathode. Ground. Voltage Output. Provides average input current monitoring. If not used, connect to ground. Low Frequency Cutoff (LFC) Setpoint. For SONET applications, see Figure 10 and contact sales for assembly details. Ground. (Output return.) Negative Output, CML, On-Chip 50 Termination (AC or DC Termination). Positive Output, CML, On-Chip 50 Termination (AC or DC Termination). On-Chip Filter Supply. Connect to VCC to Enable On-Chip RC Filter (200 , 20 pF). Leave unconnected if not used. 3.3 V Supply. Place a 200 pF, RF decoupling capacitor close to the power pad to reduce the power noise.
P = power; AI = analog input; and AO = analog output.
Rev. 0 | Page 5 of 12
04945-002
ADN2880 TYPICAL PERFORMANCE CHARACTERISTICS
70 65 60 55
3.2
3.0 3.6V
BANDWIDTH (GHz)
QB OUTPUT
2.8 3.3V 2.6 3.0V 2.4
TZ (dB-)
50 45 40 35 30
04945-017
Q OUTPUT
2.2
25 10M
100M
1G FREQUENCY (Hz)
10G
100G
-20
0
20 40 TEMPERATURE (C)
60
80
100
Figure 3. Single-Ended Transimpedance vs. Frequency
5.0
Figure 6. Bandwidth vs. VCC and Temperature
90 85 3.6V
POWER DISSIPATION (mW)
4.8
80 75 3.3V 70 65 3.0V 60 55
4.6 3.6V
TZ (k)
4.4 3.3V 3.0V 4.0
4.2
04945-018
-20
0
20 40 TEMPERATURE (C)
60
80
100
-20
0
20 40 TEMPERATURE (C)
60
80
100
Figure 4. Differential Transimpedance vs. VCC and Temperature
5.5 5.0 4.5
-30 -20
Figure 7. Power Dissipation vs. VCC and Temperature
-25
4.0
TZ (k) SDD22
-35
3.5 3.0 2.5 2.0 0 10 20 30 40 50 60 IINPP (A) 70 80 90 100
-40
-45
04945-027
100M FREQUENCY (Hz)
1G
4G
Figure 5. Differential Transimpedance vs. Input Current
Figure 8. SDD22 vs. Frequency up to 3.5 GHz, CAP = Open
Rev. 0 | Page 6 of 12
04945-021
-50 10M
04945-020
3.8 -40
50 -40
04945-019
2.0 -40
ADN2880
1,000
3.0
2.5
LOW FREQUENCY CUTOFF (kHz)
CAP = OPEN 100
VRSSI (V)
2.0
1.5
10 CAP = 1nF
1.0
0.5
04945-007
1 10
100 INPUT CURRENT (A)
1,000
0
1
2 IIN (mA)
3
4
5
Figure 9. Low Frequency Cutoff vs. Input Current
18 16
Figure 12. Full-Scale of RSSI Voltage Output vs. Input Current
350 340 330 320
IRMS NOISE (nA)
LOW FREQUENCY CUTOFF (kHz)
14 12 10 8 6 4 2
04945-031
310 300 290 280 270 260 -25 -10 5 20 35 50 TEMPERATURE (C) 65 80 95
04945-028
0 1 10 100 1,000 EXTERNAL CAPACITANCE AT CAP (pF) 10,000
250 -40
Figure 10. Low Frequency Cutoff vs. Capacitance at CAP
30
Figure 13. Input Noise vs. Temperature with 2 GHz Low-Pass Filter
350
INPUT REFERRED RMS NOISE (nA)
25
325
20
VRSSI (mV)
15
300
10
275
5
04945-024
0 0 5 10 15 20 IIN (A) 25 30 35
0
0.2
0.4 0.6 0.8 PHOTODIODE CAPACITANCE (pF)
1.0
Figure 11. RSSI Voltage Output vs. Input Current (0 A to 35 A)
Figure 14. Input Referred Noise (DC to 2.0 GHz) vs. Photodiode Capacitance CD (pF)
Rev. 0 | Page 7 of 12
04945-048
250
04945-008
0
ADN2880
5.5
INPUT OVERLOAD CURRENT (mA p-p)
5.0
5.0mV/DIV
4.5
4.0
3.5
52.9ps/DIV OPTICAL POWER -22.7dBm
Figure 15. Output Eye at 3.2 Gbps with BER <10-10 (Based on a 1550 nm PIN, Responsivity = 0.91 A/W, ER = 9 dB, PRBS 231)
50
04945-011
-25
-10
5 20 35 50 TEMPERATURE (C)
65
80
95
Figure 17. Input Overload Current vs. Temperature
25
GROUP DELAY (ps)
0
-25
0
1
2 FREQUENCY (GHz)
3
4
Figure 16. Group Delay vs. Frequency
Rev. 0 | Page 8 of 12
04945-010
-50
04945-030
3.0 -40
ADN2880 ASSEMBLY RECOMMENDATIONS
Coplanar PIN Photodiode for SDH/SONET Dual Planar PIN/APD Photodiode for SDH/SONET
VPD
VCC
VPD
VCC
CPD CA CB CA
CPD PD CB
OUTB
OUT
OUTB
OUT
04945-042
Figure 18. 5-Pin TO-46 with External Photodiode Supply VPD Connected Through the FILTER Pin
VCC B.W B.W. CB VCC
Figure 20. 5-Pin TO-46 with External Photodiode Supply VPD to a Dual Planar PIN or APD
VCC B.W B.W. CB VPD B.W. 200 50 50 B.W. OUT OUTB B.W. B.W. IN CPD
OUT OUTB
VCC
VPD
B.W. B.W.
200 50 50 B.W.
CPD
B.W. FILTER
B.W.
B.W.
IN
20pF
0.85V RSSI
20pF
0.85V RSSI
GND B.W. B.W.
GND B.W.
CAP
04945-032
GND B.W. B.W.
GND B.W.
CAP
04945-050
Figure 19. Equivalent Circuit of the Assembly Including Bond Wires
Figure 21. For Dual Planar PDs, No Connection to FILTER Pin
Table 4. Bill of Materials (BOM)
Component PD TIA CB CPD CA Description 1x vendor specific, 2.5 Gbps, photodiode 1x ADN2880 (0.7 mm x 1.2 mm), 3.2 Gbps, transimpedance amplifier 1x 200 pF, RF single-layer capacitor 1x 560 pF, RF single-layer capacitor 1x 1000 pF, ceramic capacitor (optional for SDH)
Notes One mil thickness, gold wire, ball bond recommended. Minimize all GND bond-wire lengths. Minimize IN, FILTER, OUT, and OUTB bond-wire lengths. Maintain symmetry in length and orientation between OUT and OUTB bond wires. Maintain symmetry in length and orientation between IN and FILTER bond wires. Maintain symmetry between IN/FILTER and OUT/OUTB bond wires.
Rev. 0 | Page 9 of 12
04945-049
ADN2880
PIN Photodiode for a Non-SDH/SONET Application
RSSI
VCC
RSSI
VCC
SC CB
SC
CB
OUTB
OUT
OUTB
OUT
Figure 22. Coplanar PIN and RSSI Layout for a 5-Pin TO-46
VCC B.W. CB B.W.
04945-044
Figure 24. Dual Planar PIN and RSSI Layout for a 5-Pin TO-46
ADN2880
PD
VCC
B.W. VCCFILTER
SC
CB
200 B.W. FILTER
50
50 B.W. OUT B.W. OUTB
B.W.
IN
20pF
0.85V B.W. RSSI
04945-040
B.W.
B.W.
Figure 23. Equivalent Circuit with Bond Wires, as Shown in Figure 22
04945-046
GND
GND
CAP
Figure 25. Side View of the Assembly, as Shown in Figure 22
Table 5. Bill of Materials (BOM)
Component PD TIA CB Sc Description 1x vendor specific, 2.5 Gbps, photodiode 1x ADN2880 (0.7 mm x 1.2 mm), 3.2 Gbps, transimpedance amplifier 1x 200 pF, RF single-layer capacitor 1x ceramic standoff or 1x optional capacitor
Notes One mil thickness, gold wire, ball bond recommended. Minimize all GND bond-wire lengths. Minimize IN, FILTER, OUT, and OUTB bond-wire lengths. Maintain symmetry in length and orientation between OUT and OUTB bond wires. Maintain symmetry in length and orientation between IN and FILTER bond wires. Maintain symmetry between IN/FILTER and OUT/OUTB bond wires.
Rev. 0 | Page 10 of 12
04945-022
ADN2880
PIN Photodiode for Non-SDH/SONET Applications
VCC
VCC
CB
CB
OUTB
SC
OUT
OUTB
SC
OUT
04945-043
Figure 26. Coplanar PIN for a 4-Pin TO-46
VCC B.W. CB B.W.
Figure 28. Dual Planar PIN for a 4-Pin TO-46
ADN2880
VCC
PD SC CB
B.W. VCCFILTER
200 B.W. FILTER
50
50 B.W. OUT B.W. OUTB
TO CAN HEADER
B.W.
IN
20pF
0.85V
04945-039
RSSI
B.W.
B.W.
04946-029
GND
GND
CAP
Figure 27. Equivalent Circuit with Bond Wires, as Shown in Figure 26
Figure 29. Side View of the Assembly, as Shown in Figure 26
Table 6. Bill of Materials (BOM)
Component PD TIA CB Sc Description 1x vendor specific, 2.5 Gbps, photodiode 1x ADN2880 (0.7 mm x 1.2 mm), 3.2 Gbps, transimpedance amplifier 1x 200 pF, RF single-layer capacitor 1x ceramic standoff or 1x optional 1000 pF capacitor
Notes One mil thickness, gold wire, ball bond recommended. Minimize all GND bond-wire lengths. Minimize IN, FILTER, OUT, and OUTB bond-wire lengths. Maintain symmetry in length and orientation between OUT and OUTB bond wires. Maintain symmetry in length and orientation between IN and FILTER bond wires. Maintain symmetry between IN/FILTER and OUT/OUTB bond wires.
Rev. 0 | Page 11 of 12
04945-051
ADN2880 OUTLINE DIMENSIONS
1 17 16 15 14 13
2 12 3
TOP VIEW
11
0.70
4
5
6
7
8
9
10
1.20
SIDE VIEW
Figure 30. 17-Pad Bare Die Sales [CHIP] Dimensions shown in millimeters
0.25
Table 7. Pad Coordinates
Pad No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Mnemonic GND IN TEST FILTER FILTER GND RSSI CAP GND GND OUTB OUT GND GND VCCFILTER VCC VCC X (m) -500 -500 -500 -500 -500 -350 -200 -50 +130 +500 +350 +350 +500 +130 -50 -200 -350 Y (m) +260 +130 +10 -120 -260 -260 -260 -260 -260 -260 -60 +60 +260 +260 +260 +260 +260
DIE INFORMATION
Die Size
0.7 mm x 1.2 mm (edge-to-edge, including 1 mil scribe)
Die Thickness
10 mils = 0.25 mm
Passivation Openings
0.075 mm x 0.075 mm (Pad 1 to Pad 8, Pad 10, Pad 13, Pad 15 to Pad 17) 0.144 mm x 0.075 mm (Pad 9, Pad 11, Pad 12, Pad 14)
Passivation Composition
5000 A Si3N4 (top) 5000 A SiO2 (bottom)
Pad Composition
Al/1%Cu
Substrate Contact
To ground
ORDERING GUIDE
Model ADN2880ACHIPS Temperature -40C to +95C Package Description 17-Pad Die Sales
(c) 2005 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D04945-0-7/05(0)
T T
Rev. 0 | Page 12 of 12

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